![]() ![]() ![]() Nanostructured tungsten oxide-properties, synthesis, and applications. Molybdenum oxides-from fundamentals to functionality. ![]() 2D semiconductor transistors with van der Waals oxide MoO 3 as integrated high‐ κ gate dielectric. Unconventional superconductivity in magic-angle graphene superlattices. Electrical control of 2D magnetism in bilayer CrI 3. Fragility of the dissipationless state in clean two-dimensional superconductors. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Quantum Hall effect in black phosphorus two-dimensional electron system. Phonon-limited mobility in h-BN encapsulated AB-stacked bilayer graphene. One-dimensional electrical contact to a two-dimensional material. The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. Boron nitride substrates for high-quality graphene electronics. Disorder in van der Waals heterostructures of 2D materials. Dielectric properties of ultrathin CaF 2 ionic crystals. Insulators for 2D nanoelectronics: the gap to bridge. Alternative dielectrics to silicon dioxide for memory and logic devices. Transistors based on two-dimensional materials for future integrated circuits. Promises and prospects of two-dimensional transistors. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits. For example, in 2D Bi 2O 2Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm 2 V −1 s −1 at 1.8 K. With these Bi 2SeO 5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi 2O 2Se, MoS 2 and graphene show improved electronic performances. The centimetre-scale single crystal of Bi 2SeO 5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm 2 and as thin as monolayer. Here, we report a facile synthesis of a single-crystalline high- κ ( κ of roughly 16.5) van der Waals layered dielectric Bi 2SeO 5. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant ( κ) dielectric with an atomically flat and dangling-bond-free surface 3, 4. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration 1, 2. 112, 073106 (2012).The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel 1, 2. Simoen, Germanium-Based Technologies: From Materials to Devices ( Elsevier, 2011), p. Fewster, Springer Handbook of Crystal Growth: Crystalline Layer Structures with X-Ray Diffractometry ( Springer, Berlin/Heidelberg, 2010), p. Picraux, Materials Analysis by Ion Channeling ( Academic Press, 1982). Mayer, SIMNRA version 6.06, February 2011. RBS performed at the Rutgers University Tandem Accelerator. (94)91117-7, Google Scholar Crossref, ISI ![]()
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